Saddle Field First Atom (FAB) Beam Source
Generation of a neutral beam with no charge. Manufactured by Oxford Alraid Research, UK.
By neutralizing the beam, it is also optimal for irradiation and etching processes of dielectrics and semiconductors, where charged particles have been a concern until now. ≪Applications≫ ■ Substrate cleaning before film formation ■ Sample cleaning and surface activation before room temperature bonding ■ Etching of semiconductor substrates, etc. ■ Microfabrication ■ Reactive atom beam etching ≪Features≫ ■ Unlike impacts from charged ions, there is no charge damage to insulating or semiconductor samples ■ Since the beam is charge-free, it travels straight without bending even in electric or magnetic fields.
- 企業：三和真空
- 価格：Other
